Linearity of Hetero-Gate-Dielectric Tunneling Field-Effect Transistors

Analysis and study of geometrical variability on the performance of junctionless tunneling field effect transistors: Advantage or deficiency?

This study investigates geometrical variability on the sensitivity of the junctionless tunneling field effect transistor (JLTFET) and Heterostructure JLTFET (HJLTFET) performance. We consider the transistor gate dielectric thickness as one of the main variation sources. The impacts of variations on the analog and digital performance of the devices are calculated by using computer aided design (...

Analysis and study of geometrical variability on the performance of junctionless tunneling field effect transistors: Advantage or deficiency?

This study investigates geometrical variability on the sensitivity of the junctionless tunneling field effect transistor (JLTFET) and Heterostructure JLTFET (HJLTFET) performance. We consider the transistor gate dielectric thickness as one of the main variation sources. The impacts of variations on the analog and digital performance of the devices are calculated by using computer aided design (...

Radio-frequency small-signal model of hetero-gate-dielectric p-n-p-n tunneling field- effect transistor including charge conservation capacitance and substrate parameters

Demonstration of hetero-gate-dielectric tunneling field-effect transistors (HG TFETs)

The steady scaling-down of semiconductor device for improving performance has been the most important issue among researchers. Recently, as low-power consumption becomes one of the most important requirements, there have been many researches about novel devices for low-power consumption. Though scaling supply voltage is the most effective way for low-power consumption, performance degradation i...

Comparison of the Proposed Device with Conventional Gate All around Tunnel Field Effect Transistor Gaa-tfet

In this paper, we propose and validate a Heterogate DielectricDual Material Gate-Gate All Around, Tunnel Field Effect Transistor (HD-DMG-GAA-TFET). A comparative study for different values of high-k has been done, and it has been clearly shown that the problem of lower ION (which hinders the circuit performance of TFET) can be overcome by using the dielectric engineered hetero-gate architecture...